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DS28EC20: 20Kb 1-Wire EEPROM
3.3V SUPPLY ELECTRICAL CHARACTERISTICS
( V PUP = 3.3V ±5%, T A = 0° C to +70°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
I/O PIN GENERAL DATA
1-Wire Pullup Resistance
Input Capacitance
Input Load Current
High-to-Low Switching
Threshold
Input Low Voltage
Low-to-High Switching
Threshold
Switching Hysteresis
R PUP
C IO
I L
V TL
V IL
V TH
V HY
(Notes 1, 2)
(Notes 3, 4)
I/O pin at V PUP
(Notes 4, 5, 6)
(Notes 1, 7)
(Notes 4, 5, 8)
(Notes 4, 5, 9)
0.3
0.05
0.49
1.09
0.33
2000
2.2
3.5
V PUP -
1.9
0.5
V PUP -
1.1
0.70
k ?
pF
μA
V
V
V
V
Output Low Voltage
Recovery Time
V OL
t REC
At 4mA (Note 10)
Standard speed (Notes 1, 11)
5
0.30
V
μs
Rising-Edge Hold-off Time
Timeslot Duration
t REH
t SLOT
Standard speed (Notes 4, 12)
Standard speed (Notes 1, 13)
0.5
65
5.0
μs
μs
I/O PIN, 1-Wire RESET, PRESENCE DETECT CYCLE
Reset-Low Time
Presence-Detect High
Time
Presence-Detect Low
Time
Presence-Detect Sample
Time
t RSTL
t PDH
t PDL
t MSP
Standard speed (Note 1)
Standard speed
Standard speed
Standard speed (Notes 1, 14)
480
15
60
60
640
60
240
75
μs
μs
μs
μs
I/O PIN, 1-Wire WRITE
Write-0 Low Time
Write-1 Low Time
t W0L
t W1L
Standard speed (Notes 1, 15)
Standard speed (Notes 1, 15)
60
1
120
15
μs
μs
I/O PIN, 1-Wire READ
Read-Low Time
Read-Sample Time
t RL
t MSR
Standard speed (Notes 1, 16)
Standard speed (Notes 1, 16)
5
t RL + δ
15 - δ
15
μs
μs
EEPROM
Programming Current
Programming Time
Write/Erase Cycles (Endu-
rance) (Notes 19, 20)
Data Retention
I PROG
t PROG
N CY
t DR
(Note 17)
(Note 18)
At +25°C
At +70°C
(Notes 21, 22, 23)
200k
50k
40
0.9
10
mA
ms
?
years
4 of 27
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